tm ?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH60N60SMD rev. a1 FGH60N60SMD 600v, 60a field stop igbt march 2011 absolute maximum ratings symbol description ratings units v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 120 a collector current @ t c = 100 o c 60 a i cm (1) pulsed collector current 180 a i f diode forward current @ t c = 25 o c 60 a diode forward current @ t c = 100 o c 30 a i fm (1) pulsed diode maximum forward current 180 a p d maximum power dissipation @ t c = 25 o c 600 w maximum power dissipation @ t c = 100 o c 300 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c notes: 1: repetitive rating: pulse width limited by max. junction temperature FGH60N60SMD 600v, 60a field stop igbt g e c e c g collector (flange) features ? maximum junction temperature : t j =175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) =1.9v(typ.) @ i c = 60a ? high input impedance ? fast switching ? tighten parameter distribution ? rohs compliant applications ? solar inverter, ups, smps, pfc ? induction heating general description using novel field stop igbt tech nology, fairchild?s new series of field stop igbts offer the optimum performance for solar inverter, ups, smps, ih and pfc applications where low con - duction and switching losses are essential.
2 www.fairchildsemi.com FGH60N60SMD rev. a1 FGH60N60SMD 600v, 60a field stop igbt thermal characteristics symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case - 0.25 o c /w r jc (diode) thermal resistance, junction to case - 1.1 o c /w r ja thermal resistance, junction to ambient - 40 o c /w package marking and ordering information device marking device package reel size tape width quantity FGH60N60SMD FGH60N60SMD to-247 - - 30 electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 600 - - v bv ces t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a - 0.6 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 a, v ce = v ge 3.5 4.5 6.0 v v ce(sat) collector to emitter saturation voltage i c = 60a , v ge = 15v - 1.9 2.5 v i c = 60a , v ge = 15v, t c = 1 75 o c - 2.1 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 2915 - pf c oes output capacitance - 270 - pf c res reverse transfer capacitance - 85 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 60a, r g = 3 , v ge = 15v, inductive load, t c = 25 o c - 18 27 ns t r rise time - 47 70 ns t d(off) turn-off delay time - 104 146 ns t f fall time - 50 68 ns e on turn-on switching loss - 1.26 1.94 mj e off turn-off switching loss - 0.45 0.6 mj e ts total switching loss - 1.71 2.54 mj t d(on) turn-on delay time v cc = 400v, i c = 60a, r g = 3 , v ge = 15v, inductive load, t c = 175 o c - 18 - ns t r rise time - 41 - ns t d(off) turn-off delay time - 115 - ns t f fall time - 48 - ns e on turn-on switching loss - 2.1 - mj e off turn-off switching loss - 0.78 - mj e ts total switching loss - 2.88 - mj
3 www.fairchildsemi.com FGH60N60SMD rev. a1 FGH60N60SMD 600v, 60a field stop igbt electrical characteristi cs of the igbt (continued) symbol parameter test conditions min. typ. max units q g total gate charge v ce = 400v, i c = 60a, v ge = 15v - 189 284 nc q ge gate to emitter charge - 20 30 nc q gc gate to collector charge - 91 137 nc electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max units v fm diode forward voltage i f = 30a t c = 25 o c - 2.1 2.7 v t c = 175 o c - 1.7 - e rec reverse recovery energy i f =30a, di f /dt = 200a/ s t c = 175 o c - 79 - uj t rr diode reverse recovery time t c = 25 o c - 30 39 ns t c = 175 o c - 72 - q rr diode reverse recovery charge t c = 25 o c - 44 62 nc t c = 175 o c - 238 -
4 www.fairchildsemi.com FGH60N60SMD rev. a1 FGH60N60SMD 600v, 60a field stop igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 0246 0 30 60 90 120 150 180 v ge = 8v 20v t c = 25 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 30 60 90 120 150 180 v ge = 8v 20v t c = 175 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 012345 0 30 60 90 120 150 180 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 24681012 0 30 60 90 120 150 180 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 30a 60a 120a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 120a 60a i c = 30a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c]
5 www.fairchildsemi.com FGH60N60SMD rev. a1 FGH60N60SMD 600v, 60a field stop igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resistance 4 8 12 16 20 0 4 8 12 16 20 i c = 30a 60a 120a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 120a i c = 30a 60a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0.1 1 10 0 1000 2000 3000 4000 5000 6000 7000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 40 80 120 160 200 0 3 6 9 12 15 400v common emitter t c = 25 o c 300v v cc = 2 00v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 300 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 p s 100 p s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 10 20 40 60 80 100 common emitter v cc = 400v, v ge = 15v i c = 60a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ : ]
6 www.fairchildsemi.com FGH60N60SMD rev. a1 FGH60N60SMD 600v, 60a field stop igbt typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistanc e figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0306090120 1 10 100 1000 common emitter v ge = 15v, r g = 3 : t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 0 1020304050 10 100 1000 6000 common emitter v cc = 400v, v ge = 15v i c = 60a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ : ] 0 1020304050 0.1 1 5 common emitter v cc = 400v, v ge = 15v i c = 60a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ : ] 0306090120 1 10 100 1000 common emitter v ge = 15v, r g = 3 : t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [ a ] 0306090120 0.01 0.1 1 10 common emitter v ge = 15v, r g = 3 : t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 1 10 100 1000 1 10 100 300 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
7 www.fairchildsemi.com FGH60N60SMD rev. a1 FGH60N60SMD 600v, 60a field stop igbt typical performance characteristics figure 19. current derating figure 20. lo ad current vs. frequency figure 21. forward characteristics figure 22. reverse current figure 23. stored charge figure 24. reverse recovery time 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 100 110 120 130 common emitter v ge = 15v collector current, i c [a] collector-emittercase temperature, t c [ o c] 1k 10k 100k 1m 0 20 40 60 80 100 120 140 160 180 tc = 75 o c square wave t j < 175 o c, d = 0.5, v ce = 400 v v ge = 15/0 v, r g = 3 : collector current, i c [a] switching frequency, f [hz] tc = 100 o c 01234 1 10 100 200 t c = 125 o c t c = 75 o c t c = 25 o c t c = 175 o c forward voltage, v f [v] forward current, i f [a] t c = 25 o c t c = 75 o c ---- t c = 125 o c ---- t c = 175 o c 0 100 200 300 400 500 600 0.01 0.1 1 10 100 1000 10000 t c = 125 o c t c = 25 o c t c = 175 o c t c = 75 o c reverse current, i ces [ ua ] reverse voltage,v r [v] 0 102030405060 0 50 100 150 200 250 300 350 t c = 25 o c t c = 175 o c ---- di/dt = 200a/ p s di/dt = 100a/ p s stored recovery charge, q rr [nc] forwad current, i f [a] 0 102030405060 20 30 40 50 60 70 80 90 100 di/dt = 200a/ p s di/dt = 100a/ p s reverse recovery time, t rr [ns] forward current, i f [a] t c = 25 o c t c = 175 o c ----
8 www.fairchildsemi.com FGH60N60SMD rev. a1 FGH60N60SMD 600v, 60a field stop igbt typical performance characteristics figure 25.transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 0.5 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
9 www.fairchildsemi.com FGH60N60SMD rev. a1 FGH60N60SMD 600v, 60a field stop igbt mechanical dimensions to - 247ab (fks pkg code 001)
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